Datasheet > M25PX80-VMS6TG

M25PX80-VMS6TG

更新时间： 2024-01-18 18:35:34

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
56页	775K
描述
8Mb, Dual I/O, 4KB Subsector Erase, 3V Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface

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数据手册

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M25PX80-VMS6TG 数据手册

M25PX80 Serial Flash Embedded Memory

Features

M25PX80 NOR Serial Flash Embedded

Memory

8Mb, Dual I/O, 4KB Subsector Erase, 3V Serial Flash Memory

with 75 MHz SPI Bus Interface

• Write protections

– Software write protection: applicable to every

Features

• SPI bus compatible serial interface

• 75 MHz (maximum) clock frequency

• 2.3V to 3.6V single supply voltage

• Dual input/output instructions resulting in an

equivalent clock frequency of 150MHz

– Dual output fast read instruction

– Dual input fast program instruction

• 8Mb flash memory

– Uniform 4KB subsectors

– Uniform 64KB sectors

• Additional 64-byte user-lockable, one-time pro-

grammable (OTP) area

• Erase capability

64KB sector (volatile lock bit)

– Hardware write protection: protected area size

defined by non-volatile bits BP0, BP1, BP2

• Deep power down: 5µA (TYP)

• Electronic signature

– JEDEC standard 2-byte signature (7114h)

– Unique ID code (UID) with 16-byte read-only

space, available upon request

• More than 100,000 write cycles per sector

• More than 20 years data retention

• Packages (RoHS compliant)

– VFQFPN8 (MP) 6mm x 5mm

– SO8W (MW) 208mils

– SO8N (MN) 150mils

• Automotive grade parts available

– Subsector (4KB granularity)

– Sector (64KB granularity)

– Bulk erase (8Mb) in 8 s (TYP)

PDF: 09005aef8456659e

m25px80.pdf - Rev. C 1/14 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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