5秒后页面跳转
M25PX16-VMW6G PDF预览

M25PX16-VMW6G

更新时间: 2024-09-26 14:59:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
65页 1418K
描述
16Mb, Dual I/O, 4KB Subsector Erase, Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface

M25PX16-VMW6G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.3针数:8
Reach Compliance Code:compliantECCN代码:3A991.B.1.B.1
HTS代码:8542.32.00.51风险等级:5.73
最大时钟频率 (fCLK):75 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5/3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:2.5 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:5.62 mm
最长写入周期时间 (tWC):15 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25PX16-VMW6G 数据手册

 浏览型号M25PX16-VMW6G的Datasheet PDF文件第2页浏览型号M25PX16-VMW6G的Datasheet PDF文件第3页浏览型号M25PX16-VMW6G的Datasheet PDF文件第4页浏览型号M25PX16-VMW6G的Datasheet PDF文件第5页浏览型号M25PX16-VMW6G的Datasheet PDF文件第6页浏览型号M25PX16-VMW6G的Datasheet PDF文件第7页 
M25PX16  
16-Mbit, dual I/O, 4-Kbyte subsector erase,  
serial Flash memory with 75 MHz SPI bus interface  
Features  
„ SPI bus compatible serial interface  
„ 75 MHz (maximum) clock frequency  
„ 2.3 V to 3.6 V single supply voltage  
„ Dual input/output instructions resulting in an  
VFQFPN8 (MP)  
6 × 5 mm  
equivalent clock frequency of 150 MHz:  
– Dual Output Fast Read instruction  
– Dual Input Fast Program instruction  
„ 16 Mbit Flash memory  
– Uniform 4-Kbyte subsectors  
– Uniform 64-Kbyte sectors  
SO8W (MW)  
208 mils  
„ Additional 64-byte user-lockable, one-time  
programmable (OTP) area  
„ Erase capability  
– Subsector (4-Kbyte) granularity  
– Sector (64-Kbyte) granularity  
– Bulk Erase (16 Mbit) in 15 s (typical)  
„ Write protections  
– Software write protection applicable to  
every 64-Kbyte sector (volatile lock bit)  
SO8 (MN)  
150 mils  
– Hardware write protection: protected area  
size defined by three non-volatile bits (BP0,  
BP1 and BP2)  
„ Deep Power-down mode: 5 µA (typical)  
„ Electronic signature  
– JEDEC standard two-byte signature  
(7115h)  
– Unique ID code (UID) with16 bytes read-  
only, available upon customer request  
TBGA24 (ZM) 6x8 mm  
„ More than 100 000 write cycles per sector  
„ More than 20 year data retention  
„ Packages  
– RoHS compliant  
„ Automotive certified parts available  
March 2010  
Rev 8  
1/65  
www.numonyx.com  
1

M25PX16-VMW6G 替代型号

型号 品牌 替代类型 描述 数据表
M25PX16-VMN6TP MICRON

完全替代

16Mb, Dual I/O, 4KB Subsector Erase, Serial NOR Flash Memory with 75 MHz Serial Peripheral
M25P16-VMN6P MICRON

类似代替

16Mb Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface

与M25PX16-VMW6G相关器件

型号 品牌 获取价格 描述 数据表
M25PX16-VMW6TG MICRON

获取价格

Micron M25PX16 Serial Flash Embedded Memory
M25PX16-VZM6P MICRON

获取价格

16Mb, Dual I/O, 4KB Subsector Erase, Serial NOR Flash Memory with 75 MHz Serial Peripheral
M25PX16-VZM6TP MICRON

获取价格

16Mb, Dual I/O, 4KB Subsector Erase, Serial NOR Flash Memory with 75 MHz Serial Peripheral
M25PX32 STMICROELECTRONICS

获取价格

32-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interf
M25PX32 NUMONYX

获取价格

32-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interf
M25PX32SOVMF3EA NUMONYX

获取价格

Flash, 4MX8, PDSO16,
M25PX32SOVMF3EBA NUMONYX

获取价格

Flash, 4MX8, PDSO16,
M25PX32SOVMF3FA NUMONYX

获取价格

Flash, 4MX8, PDSO16,
M25PX32SOVMF3FBA NUMONYX

获取价格

Flash, 4MX8, PDSO16,
M25PX32SOVMF6E NUMONYX

获取价格

Flash, 4MX8, PDSO16