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M25PX16-VMN3G PDF预览

M25PX16-VMN3G

更新时间: 2024-09-26 05:53:47
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
61页 1363K
描述
EEPROM, 2MX8, Serial, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8

M25PX16-VMN3G 数据手册

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M25PX16  
16-Mbit, dual I/O, 4-Kbyte subsector erase,  
serial Flash memory with 75 MHz SPI bus interface  
Features  
„ SPI bus compatible serial interface  
„ 75 MHz (maximum) clock frequency  
„ 2.3 V to 3.6 V single supply voltage  
„ Dual input/output instructions resulting in an  
VFQFPN8 (MP)  
6 × 5 mm  
equivalent clock frequency of 150 MHz:  
– Dual Output Fast Read instruction  
– Dual Input Fast Program instruction  
„ 16 Mbit Flash memory  
– Uniform 4-Kbyte subsectors  
– Uniform 64-Kbyte sectors  
SO8W (MW)  
208 mils  
„ Additional 64-byte user-lockable, one-time  
programmable (OTP) area  
„ Erase capability  
– Subsector (4-Kbyte) granularity  
– Sector (64-Kbyte) granularity  
– Bulk Erase (16 Mbit) in 15 s (typical)  
„ Write protections  
– Software write protection applicable to  
every 64-Kbyte sector (volatile lock bit)  
SO8 (MN)  
150 mils  
– Hardware write protection: protected area  
size defined by three non-volatile bits (BP0,  
BP1 and BP2)  
„ Deep Power-down mode: 5 μA (typical)  
„ Electronic signature  
– JEDEC standard two-byte signature  
(7115h)  
– Unique ID code (UID) with16 bytes read-  
only, available upon customer request  
„ More than 100 000 write cycles per sector  
„ More than 20 year data retention  
„ Packages  
– ECOPACK® (RoHS compliant)  
October 2008  
Rev 3  
1/61  
www.numonyx.com  
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