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M25PE80-VMN6TP PDF预览

M25PE80-VMN6TP

更新时间: 2024-11-25 15:18:07
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
64页 802K
描述
8Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripheral Interface, Standard Pinout

M25PE80-VMN6TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:8.24
Is Samacsys:N最大时钟频率 (fCLK):75 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:3.9 mm
最长写入周期时间 (tWC):23 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25PE80-VMN6TP 数据手册

 浏览型号M25PE80-VMN6TP的Datasheet PDF文件第2页浏览型号M25PE80-VMN6TP的Datasheet PDF文件第3页浏览型号M25PE80-VMN6TP的Datasheet PDF文件第4页浏览型号M25PE80-VMN6TP的Datasheet PDF文件第5页浏览型号M25PE80-VMN6TP的Datasheet PDF文件第6页浏览型号M25PE80-VMN6TP的Datasheet PDF文件第7页 
M25PE80 Serial Flash Memory  
Features  
M25PE80 8Mb 3V NOR Serial Flash  
Memory  
Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard  
Pinout  
Features  
• 8Mb of page-erasable Flash memory  
• 2.7V to 3.6V single supply voltage  
• SPI bus-compatible serial interface  
• 75 MHz clock rate (maximum)  
• Page size: 256 bytes  
– Page write in 11ms (TYP)  
– Page program in 0.8ms (TYP)  
– Page erase in 10ms (TYP)  
• Subsector erase: 4KB  
– Sector erase: 64KB  
– Bulk erase: 8Mb  
• Deep power-down mode: 1µA (TYP)  
• Electronic signature  
– JEDEC standard 2-byte signature (8014h)  
– Unique ID code (UID) with 16 bytes read-only  
• Software write-protection on a 64KB sector basis  
• Hardware write protection of the memory area se-  
lected using the BP0, BP1, and BP2 bits  
• More than 100,000 write cycles  
• More than 20 years of data retention  
• Packages (RoHS compliant)  
– VFQFPN8 (MP) 6mm x 5mm (MLP8)  
– QFN8L (MS) 6mm x 5mm (MLP8)  
– SO8W (MW) 208 mils  
– SO8N (MN) 150 mils  
• Automotive grade parts available  
09005aef845660f2  
m25pe80.pdf - Rev. E 06/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2013 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  

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