5秒后页面跳转
M25PE40VMN6TP PDF预览

M25PE40VMN6TP

更新时间: 2024-11-24 04:43:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管时钟
页数 文件大小 规格书
60页 484K
描述
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

M25PE40VMN6TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP, SOP8,.3针数:8
Reach Compliance Code:unknownECCN代码:3A991.B.1.B.1
HTS代码:8542.32.00.51风险等级:5.67
最大时钟频率 (fCLK):50 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:3.9 mm
最长写入周期时间 (tWC):25 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25PE40VMN6TP 数据手册

 浏览型号M25PE40VMN6TP的Datasheet PDF文件第2页浏览型号M25PE40VMN6TP的Datasheet PDF文件第3页浏览型号M25PE40VMN6TP的Datasheet PDF文件第4页浏览型号M25PE40VMN6TP的Datasheet PDF文件第5页浏览型号M25PE40VMN6TP的Datasheet PDF文件第6页浏览型号M25PE40VMN6TP的Datasheet PDF文件第7页 
M25PE40  
4 Mbit, low voltage, Page-Erasable Serial Flash memory with  
byte alterability, 50 MHz SPI bus, standard pinout  
Features  
SPI bus compatible serial interface  
4 Mbit Page-Erasable Flash memory  
Page size: 256 bytes  
– Page Write in 11 ms (typical)  
– Page Program in 0.8 ms (typical)  
– Page Erase in 10 ms (typical)  
VFQFPN8 (MP)  
6 × 5 mm (MLP8)  
SubSector Erase (4 Kbytes)  
Sector Erase (64 Kbytes)  
Bulk Erase (4 Mbits)  
2.7 V to 3.6 V single supply voltage  
50 MHz clock rate (maximum)  
Deep Power-down mode 1 µA (typical)  
Electronic Signature  
SO8W (MW) 208 mils width  
SO8N (MN) 150 mils width  
– JEDEC standard two-byte signature  
(8013h)  
Software Write Protection on a 64 Kbyte sector  
basis  
Hardware Write Protection of the memory area  
selected using the BP0, BP1 and BP2 bits  
More than 100 000 Write cycles  
More than 20 year data retention  
Packages  
– ECOPACK® (RoHS compliant)  
January 2007  
Rev 7  
1/59  
www.st.com  
1

与M25PE40VMN6TP相关器件

型号 品牌 获取价格 描述 数据表
M25PE40-VMN6TP NUMONYX

获取价格

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard
M25PE40-VMN6TP MICRON

获取价格

4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher
M25PE40-VMN6TPBA MICRON

获取价格

4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher
M25PE40-VMP6 STMICROELECTRONICS

获取价格

512KX8 FLASH 2.7V PROM, DSO8, 6 X 5 MM, MLP-8
M25PE40VMP6G STMICROELECTRONICS

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI
M25PE40-VMP6G NUMONYX

获取价格

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard
M25PE40-VMP6G STMICROELECTRONICS

获取价格

Flash, 512KX8, 6 X 5 MM, ROHS COMPLIANT, MLP-8
M25PE40VMP6P STMICROELECTRONICS

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI
M25PE40-VMP6P NUMONYX

获取价格

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard
M25PE40-VMP6P STMICROELECTRONICS

获取价格

512KX8 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, MLP-8