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M25PE40-VMN6TG PDF预览

M25PE40-VMN6TG

更新时间: 2024-11-24 04:43:31
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存内存集成电路光电二极管时钟
页数 文件大小 规格书
62页 1298K
描述
4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

M25PE40-VMN6TG 数据手册

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M25PE40  
4 Mbit, page-erasable serial Flash memory with  
byte alterability, 75 MHz SPI bus, standard pinout  
Features  
SPI bus compatible serial interface  
4 Mbit page-erasable Flash memory  
Page size: 256 bytes  
– Page Write in 11 ms (typical)  
– Page Program in 0.8 ms (typical)  
– Page Erase in 10 ms (typical)  
VFQFPN8 (MP)  
6 × 5 mm (MLP8)  
Subsector Erase (4 Kbytes)  
Sector Erase (64 Kbytes)  
Bulk Erase (4 Mbits)  
2.7 V to 3.6 V single supply voltage  
75 MHz clock rate (maximum)  
Deep Power-down mode 1 µA (typical)  
Electronic signature  
SO8W (MW) 208 mils  
SO8N (MN) 150 mils  
– JEDEC standard two-byte signature  
(8013h)  
Software write protection on a 64-Kbyte sector  
basis  
Hardware write protection of the memory area  
selected using the BP0, BP1 and BP2 bits  
More than 100 000 Write cycles  
More than 20 year data retention  
Packages  
– ECOPACK® (RoHS compliant)  
January 2008  
Rev 9  
1/62  
www.numonyx.com  
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