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M25P80-VMW3P PDF预览

M25P80-VMW3P

更新时间: 2024-11-20 03:19:43
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
52页 995K
描述
8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface

M25P80-VMW3P 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknown风险等级:5.4
Is Samacsys:N最大时钟频率 (fCLK):40 MHz
JESD-30 代码:R-PDSO-G8JESD-609代码:e3/e4
长度:5.3 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.03 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:MATTE TIN/NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:5.25 mm
Base Number Matches:1

M25P80-VMW3P 数据手册

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M25P80  
8 Mbit, low voltage, serial Flash memory  
with 75 MHz SPI bus interface  
Features  
SPI bus compatible serial interface  
75 MHz Clock rate (maximum)  
2.7 V to 3.6 V single supply voltage  
8 Mbit of Flash memory  
Page Program (up to 256 bytes) in 0.64 ms  
VFQFPN8 (MP)  
6 × 5 mm (MLP8)  
(typical)  
Sector Erase (512 Kbit) in 0.6 s (typical)  
Bulk Erase (8 Mbit) in 8 s (typical)  
Hardware Write protection: protected area size  
defined by three non-volatile bits (BP0, BP1  
and BP2)  
Deep Power-down mode 1 µA (typical)  
Electronic signatures  
SO8W (MW)  
208 mils width  
– JEDEC Standard two-byte signature  
(2014h)  
– Unique ID code (UID) +16 bytes of CFI  
data  
– RES instruction one-byte signature (13h)  
for backward compatibility  
More than 100 000 Program/Erase cycles per  
SO8N (MN)  
150 mils width  
sector  
More than 20 years’ data retention  
Packages  
– ECOPACK® (RoHS compliant)  
December 2007  
Rev 16  
1/52  
www.numonyx.com  
1

M25P80-VMW3P 替代型号

型号 品牌 替代类型 描述 数据表
W25Q80BWSNIG WINBOND

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W25Q80BWSNIP WINBOND

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1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

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