是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | DFN | 包装说明: | HVQCCN, SOLCC8,.25 |
针数: | 8 | Reach Compliance Code: | compliant |
风险等级: | 5.32 | 其他特性: | 40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
最大时钟频率 (fCLK): | 75 MHz | 数据保留时间-最小值: | 20 |
耐久性: | 100000 Write/Erase Cycles | JESD-30 代码: | R-XQCC-N8 |
长度: | 6 mm | 内存密度: | 8388608 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 1MX8 |
封装主体材料: | UNSPECIFIED | 封装代码: | HVQCCN |
封装等效代码: | SOLCC8,.25 | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3/3.3 V |
编程电压: | 2.7 V | 认证状态: | Not Qualified |
座面最大高度: | 1 mm | 串行总线类型: | SPI |
最大待机电流: | 0.00001 A | 子类别: | Flash Memories |
最大压摆率: | 0.015 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 类型: | NOR TYPE |
宽度: | 5 mm | 最长写入周期时间 (tWC): | 15 ms |
写保护: | HARDWARE/SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
M25P64-VME6G | STMICROELECTRONICS |
类似代替 |
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M25P80VMP6TP | STMICROELECTRONICS |
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512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf | |
M25P80-VMP6TP | STMICROELECTRONICS |
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M25P80-VMP6TP | NUMONYX |
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M25P80-VMS6G | MICRON |
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M25P80-VMW3G | NUMONYX |
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M25P80-VMW3P | NUMONYX |
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M25P80-VMW3TG | NUMONYX |
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M25P80VMW3TP | STMICROELECTRONICS |
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1MX8 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, PLASTIC, SO-8 |