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M25P80-VMP6TG PDF预览

M25P80-VMP6TG

更新时间: 2024-11-19 22:18:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路时钟
页数 文件大小 规格书
41页 564K
描述
8 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface

M25P80-VMP6TG 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:HVQCCN, SOLCC8,.25
针数:8Reach Compliance Code:compliant
风险等级:5.32其他特性:40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST
最大时钟频率 (fCLK):75 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-XQCC-N8
长度:6 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装等效代码:SOLCC8,.25封装形状:RECTANGULAR
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:5 mm最长写入周期时间 (tWC):15 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

M25P80-VMP6TG 数据手册

 浏览型号M25P80-VMP6TG的Datasheet PDF文件第2页浏览型号M25P80-VMP6TG的Datasheet PDF文件第3页浏览型号M25P80-VMP6TG的Datasheet PDF文件第4页浏览型号M25P80-VMP6TG的Datasheet PDF文件第5页浏览型号M25P80-VMP6TG的Datasheet PDF文件第6页浏览型号M25P80-VMP6TG的Datasheet PDF文件第7页 
M25P80  
8 Mbit, Low Voltage, Serial Flash Memory  
With 40MHz SPI Bus Interface  
FEATURES SUMMARY  
8 Mbit of Flash Memory  
Figure 1. Packages  
Page Program (up to 256 Bytes) in 1.4ms  
(typical)  
Sector Erase (512 Kbit) in 1s (typical)  
Bulk Erase (8 Mbit) in 10s (typical)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
40MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature (13h)  
VDFPN8 (MP)  
(MLP8)  
SO16 (MF)  
300 mil width  
8
1
SO8 (MW)  
200 mil width  
August 2004  
1/41  

M25P80-VMP6TG 替代型号

型号 品牌 替代类型 描述 数据表
M25P64-VME6G STMICROELECTRONICS

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