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M25P80-VMP3TG PDF预览

M25P80-VMP3TG

更新时间: 2024-11-27 20:35:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
41页 258K
描述
1M X 8 FLASH 2.7V PROM, PDSO8, ANTIMONY, TBBP-A FREE AND ROHS COMPLIANT, MLP-8

M25P80-VMP3TG 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFP包装说明:SON,
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.33Is Samacsys:N
最大时钟频率 (fCLK):50 MHzJESD-30 代码:R-PDSO-N8
JESD-609代码:e3长度:6 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:SON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:5 mm
Base Number Matches:1

M25P80-VMP3TG 数据手册

 浏览型号M25P80-VMP3TG的Datasheet PDF文件第2页浏览型号M25P80-VMP3TG的Datasheet PDF文件第3页浏览型号M25P80-VMP3TG的Datasheet PDF文件第4页浏览型号M25P80-VMP3TG的Datasheet PDF文件第5页浏览型号M25P80-VMP3TG的Datasheet PDF文件第6页浏览型号M25P80-VMP3TG的Datasheet PDF文件第7页 
M25P80  
8 Mbit, Low Voltage, Serial Flash Memory  
With 40MHz SPI Bus Interface  
FEATURES SUMMARY  
8 Mbit of Flash Memory  
Figure 1. Packages  
Page Program (up to 256 Bytes) in 1.4ms  
(typical)  
Sector Erase (512 Kbit) in 1s (typical)  
Bulk Erase (8 Mbit) in 10s (typical)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
40MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature (13h)  
VDFPN8 (MP)  
(MLP8)  
SO16 (MF)  
300 mil width  
8
1
SO8 (MW)  
200 mil width  
August 2004  
1/41  
 
 

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