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M25P64-VMF6TG PDF预览

M25P64-VMF6TG

更新时间: 2024-11-18 03:35:47
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
50页 943K
描述
64 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface

M25P64-VMF6TG 数据手册

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M25P64  
64 Mbit, low voltage, Serial Flash memory  
with 50 MHz SPI bus interface  
Features  
64 Mbit of Flash memory  
2.7 V to 3.6 V single supply voltage  
SPI bus compatible serial interface  
50 MHz clock rate (maximum)  
VDFPN8 (ME)  
8 × 6 mm (MLP8)  
V = 9 V for Fast Program/Erase mode  
PP  
(optional)  
Page Program (up to 256 Bytes)  
– in 1.4 ms (typical)  
– in 0.35 ms (typical with V = 9 V)  
PP  
Sector Erase (512 Kbit)  
Bulk Erase (64 Mbit)  
Electronic Signatures  
SO16 (MF)  
– JEDEC standard two-Byte signature  
(2017h)  
300 mils width  
– RES instruction, one-Byte, signature (16h),  
for backward compatibility  
Hardware Write Protection: protected area size  
defined by three non-volatile bits (BP0, BP1  
and BP2)  
More than 100 000 Erase/Program cycles per  
sector  
More than 20-year data retention  
Packages  
– ECOPACK® (RoHS compliant)  
December 2007  
Rev 7  
1/50  
www.numonyx.com  
1

M25P64-VMF6TG 替代型号

型号 品牌 替代类型 描述 数据表
EPCS128SI16N INTEL

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Configuration Memory, 128MX1, Serial, CMOS, PDSO16, LEAD FREE, PLASTIC, SOIC-16

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This tech note describes considerations in thermal applications for Micron memory devices,