是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SOIC | 包装说明: | SOP, SOP16,.4 |
针数: | 16 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.41 | 最大时钟频率 (fCLK): | 50 MHz |
数据保留时间-最小值: | 20 | 耐久性: | 100000 Write/Erase Cycles |
JESD-30 代码: | R-PDSO-G16 | 长度: | 10.3 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 16 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 8MX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP16,.4 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | 260 |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 2.65 mm |
串行总线类型: | SPI | 最大待机电流: | 0.00005 A |
子类别: | Flash Memories | 最大压摆率: | 0.02 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
类型: | NOR TYPE | 宽度: | 7.5 mm |
最长写入周期时间 (tWC): | 15 ms | 写保护: | HARDWARE/SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
M25P32-VMF6TP | STMICROELECTRONICS |
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