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M25P64-VME6GBA PDF预览

M25P64-VME6GBA

更新时间: 2024-02-11 16:36:42
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路时钟
页数 文件大小 规格书
50页 943K
描述
Flash, 8MX8, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8

M25P64-VME6GBA 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFP包装说明:SON, SOLCC8,.3
针数:8Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.48最大时钟频率 (fCLK):75 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-N8长度:10.3 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8MX8封装主体材料:PLASTIC/EPOXY
封装代码:SON封装等效代码:SOLCC8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:2.65 mm
串行总线类型:SPI最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:7.5 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25P64-VME6GBA 数据手册

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M25P64  
64 Mbit, low voltage, Serial Flash memory  
with 50 MHz SPI bus interface  
Features  
64 Mbit of Flash memory  
2.7 V to 3.6 V single supply voltage  
SPI bus compatible serial interface  
50 MHz clock rate (maximum)  
VDFPN8 (ME)  
8 × 6 mm (MLP8)  
V = 9 V for Fast Program/Erase mode  
PP  
(optional)  
Page Program (up to 256 Bytes)  
– in 1.4 ms (typical)  
– in 0.35 ms (typical with V = 9 V)  
PP  
Sector Erase (512 Kbit)  
Bulk Erase (64 Mbit)  
Electronic Signatures  
SO16 (MF)  
– JEDEC standard two-Byte signature  
(2017h)  
300 mils width  
– RES instruction, one-Byte, signature (16h),  
for backward compatibility  
Hardware Write Protection: protected area size  
defined by three non-volatile bits (BP0, BP1  
and BP2)  
More than 100 000 Erase/Program cycles per  
sector  
More than 20-year data retention  
Packages  
– ECOPACK® (RoHS compliant)  
December 2007  
Rev 7  
1/50  
www.numonyx.com  
1

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