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M25P64-VME3TGB PDF预览

M25P64-VME3TGB

更新时间: 2024-11-18 05:12:19
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管
页数 文件大小 规格书
54页 1079K
描述
Flash, 8MX8, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8

M25P64-VME3TGB 数据手册

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M25P64  
64 Mbit, low voltage, Serial Flash memory  
with 75 MHz SPI bus interface  
Features  
„ 64 Mbit of Flash memory  
„ 2.7 V to 3.6 V single supply voltage  
„ SPI bus compatible serial interface  
„ 75 MHz clock rate (maximum)  
VDFPN8 (ME)  
8 × 6 mm (MLP8)  
„ Page Program (up to 256 Bytes)  
– in 1.4 ms (typical)  
– in 0.35 ms (typical with VPP = 9 V)  
„ Sector Erase (512 Kbit)  
„ Bulk Erase (64 Mbit)  
„ Electronic Signatures  
– JEDEC standard two-Byte signature  
(2017h)  
SO16 (MF)  
300 mils width  
– RES instruction, one-Byte, signature (16h),  
for backward compatibility  
– Unique ID code (UID) with 16 bytes  
readonly: available upon customer request  
„ Hardware Write Protection: protected area size  
defined by three non-volatile bits (BP0, BP1  
and BP2)  
„ More than 100 000 Erase/Program cycles per  
sector  
„ More than 20-year data retention  
„ Packages  
– RoHS compliant  
„ Automotive certified parts available  
May 2009  
Rev 9  
1/54  
www.numonyx.com  
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