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M25P40-VMW6Txx PDF预览

M25P40-VMW6Txx

更新时间: 2024-11-17 12:01:35
品牌 Logo 应用领域
镁光 - MICRON 闪存存储
页数 文件大小 规格书
59页 785K
描述
Micron M25P40 Serial Flash Embedded Memory

M25P40-VMW6Txx 数据手册

 浏览型号M25P40-VMW6Txx的Datasheet PDF文件第2页浏览型号M25P40-VMW6Txx的Datasheet PDF文件第3页浏览型号M25P40-VMW6Txx的Datasheet PDF文件第4页浏览型号M25P40-VMW6Txx的Datasheet PDF文件第5页浏览型号M25P40-VMW6Txx的Datasheet PDF文件第6页浏览型号M25P40-VMW6Txx的Datasheet PDF文件第7页 
Micron M25P40 Serial Flash Embedded Memory  
Features  
Micron M25P40 Serial Flash Embedded  
Memory  
M25P40-VMB6Txx  
M25P40-VMC6Gx; M25P40-VMC6Txx  
M25P40-VMN3Px; M25P40-VMN3Txx  
M25P40-VMN6Pxx; M25P40-VMN6Txxx  
M25P40-VMP6Gx; M25P40-VMP6Txx  
M25P40-VMS6Gx; M25P40-VMS6Tx  
M25P40-VMW6Gx; M25P40-VMW6Txx  
• Electronic signature  
– JEDEC-standard 2-byte signature (2013h)  
– Unique ID code (UID) with 16-byte read-only  
space, available upon request  
Features  
• SPI bus-compatible serial interface  
• 4Mb Flash memory  
• 75 MHz clock frequency (maximum)  
• 2.3V to 3.6V single supply voltage  
• Page program (up to 256 bytes) in 0.8ms (TYP)  
• Erase capability  
– Sector erase: 512Kb in 0.6 s (TYP)  
– Bulk erase: 4Mb in 4.5 s (TYP)  
• Write protection  
– RES command, one-byte signature (12h) for  
backward compatibility  
• More than 100,000 write cycles per sector  
• Automotive-grade parts available  
• Packages (RoHS-compliant)  
– SO8N (MN) 150 mils  
– SO8W (MW) 208 mils  
– Hardware write protection: protected area size  
defined by nonvolatile bits BP0, BP1, BP2  
• Deep power-down: 1µA (TYP)  
– DFN8 (MS) MLP8, 6mm x 5mm  
– VFDFPN8 (MP) MLP8 6mm x 5mm  
– UFDFPN8 (MC) MLP8 4mm x 3mm  
– UFDFPN8 (MB) MLP8 2mm x 3mm  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. Y 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2011 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

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