是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | 0.208 INCH, PLASTIC, SOP-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.B.1 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.5 |
最大时钟频率 (fCLK): | 75 MHz | 数据保留时间-最小值: | 20 |
耐久性: | 100000 Write/Erase Cycles | JESD-30 代码: | R-PDSO-G8 |
长度: | 5.62 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | 225 |
电源: | 2.5/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 2.5 mm |
串行总线类型: | SPI | 最大待机电流: | 0.00001 A |
子类别: | Flash Memories | 最大压摆率: | 0.015 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.7 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
类型: | NOR TYPE | 写保护: | HARDWARE/SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M25P40-VMW6Txx | MICRON |
获取价格 |
Micron M25P40 Serial Flash Embedded Memory | |
M25P64 | STMICROELECTRONICS |
获取价格 |
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface | |
M25P64 | NUMONYX |
获取价格 |
64 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface | |
M25P64_07 | STMICROELECTRONICS |
获取价格 |
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface | |
M25P64-VME3GB | NUMONYX |
获取价格 |
Flash, 8MX8, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8 | |
M25P64-VME3GBA | NUMONYX |
获取价格 |
Flash, 8MX8, PDSO8 | |
M25P64-VME3PBA | NUMONYX |
获取价格 |
Flash, 8MX8, PDSO8 | |
M25P64-VME3TGB | NUMONYX |
获取价格 |
Flash, 8MX8, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8 | |
M25P64-VME3TGBA | NUMONYX |
获取价格 |
Flash, 8MX8, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8 | |
M25P64-VME3TPB | NUMONYX |
获取价格 |
Flash, 8MX8, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8 |