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M25P40-VMW6T PDF预览

M25P40-VMW6T

更新时间: 2024-11-16 22:15:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
35页 389K
描述
4 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface

M25P40-VMW6T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.200 INCH, PLASTIC, SO-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.61Is Samacsys:N
最大时钟频率 (fCLK):20 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:5.3 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.03 mm串行总线类型:SPI
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL类型:NOR TYPE
宽度:5.25 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25P40-VMW6T 数据手册

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M25P40  
4 Mbit, Low Voltage, Serial Flash Memory  
With 25 MHz SPI Bus Interface  
FEATURES SUMMARY  
4 Mbit of Flash Memory  
Figure 1. Packages  
Page Program (up to 256 Bytes) in 1.5ms  
(typical)  
Sector Erase (512 Kbit) in 2 s (typical)  
Bulk Erase (4 Mbit) in 5 s (typical)  
2.7 V to 3.6 V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
25 MHz Clock Rate (maximum)  
Deep Power-down Mode 1 µA (typical)  
Electronic Signature (12h)  
8
1
SO8 (MN)  
150 mil width  
More than 100,000 Erase/Program Cycles per  
Sector  
More than 20 Year Data Retention  
VFQFPN8 (MP)  
(MLP8)  
June 2003  
1/35  

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