Datasheet > 存储 > 闪存> M25P40-VMW3TG/XA

M25P40-VMW3TG/XA

更新时间： 2024-11-20 04:47:15

品牌	Logo	应用领域
恒忆 - NUMONYX		时钟光电二极管内存集成电路存储闪存
页数	文件大小	规格书
57页	1161K
描述
Flash, 512KX8, PDSO8

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中文翻译

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数据手册

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M25P40-VMW3TG/XA 数据手册

M25P40

4 Mbit, low voltage, serial Flash memory

with 75 MHz SPI bus interface

Features

4 Mbit of Flash memory

2.3 V to 3.6 V single supply voltage

SPI bus compatible serial interface

75 MHz clock rate (maximum)

SO8 (MN)

150 mils width

Page Program (up to 256 bytes) in 0.8 ms

(typical)

Sector Erase (512 Kbit) in 0.6 s (typical)

Bulk Erase (4 Mbit) in 4.5 s (typical)

Deep Power-down mode 1 μA (typical)

Hardware Write Protection: protected area

size defined by three non-volatile bits (BP0,

BP1 and BP2)

SO8W (MW)

208 mils width

Electronic signatures

– JEDEC standard two-byte signature

(2013h)

– Unique ID code (UID) with 16 bytes read-

only, available upon customer request

– RES instruction, one-byte, signature (12h),

for backward compatibility

QFN8L (MS)

MLP8 6 x 5 mm

Packages

– RoHS compliant

Automotive grade parts available

VFQPN8 (MP)

(MLP8 6 x 5 mm)

May 2009

Rev 18

1/57

www.Numonyx.com

12 3 4 5 6 7...57

中文翻译

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