Datasheet > 存储 > 闪存> M25P40-VMS6TGB

M25P40-VMS6TGB

更新时间： 2024-11-25 03:22:39

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管闪存
页数	文件大小	规格书
57页	1161K
描述
EEPROM, 512KX8, Serial, CMOS, PDSO8, 6 X 5 MM, QFN-8

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中文翻译

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数据手册

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M25P40-VMS6TGB 数据手册

M25P40

4 Mbit, low voltage, serial Flash memory

with 75 MHz SPI bus interface

Features

4 Mbit of Flash memory

2.3 V to 3.6 V single supply voltage

SPI bus compatible serial interface

75 MHz clock rate (maximum)

SO8 (MN)

150 mils width

Page Program (up to 256 bytes) in 0.8 ms

(typical)

Sector Erase (512 Kbit) in 0.6 s (typical)

Bulk Erase (4 Mbit) in 4.5 s (typical)

Deep Power-down mode 1 μA (typical)

Hardware Write Protection: protected area

size defined by three non-volatile bits (BP0,

BP1 and BP2)

SO8W (MW)

208 mils width

Electronic signatures

– JEDEC standard two-byte signature

(2013h)

– Unique ID code (UID) with 16 bytes read-

only, available upon customer request

– RES instruction, one-byte, signature (12h),

for backward compatibility

QFN8L (MS)

MLP8 6 x 5 mm

Packages

– RoHS compliant

Automotive grade parts available

VFQPN8 (MP)

(MLP8 6 x 5 mm)

May 2009

Rev 18

1/57

www.Numonyx.com

12 3 4 5 6 7...57

中文翻译

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