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M25P40-VMS6G PDF预览

M25P40-VMS6G

更新时间: 2024-11-28 06:52:59
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管存储闪存
页数 文件大小 规格书
57页 1161K
描述
Flash, 512KX8, PDSO8

M25P40-VMS6G 数据手册

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M25P40  
4 Mbit, low voltage, serial Flash memory  
with 75 MHz SPI bus interface  
Features  
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4 Mbit of Flash memory  
2.3 V to 3.6 V single supply voltage  
SPI bus compatible serial interface  
75 MHz clock rate (maximum)  
SO8 (MN)  
150 mils width  
Page Program (up to 256 bytes) in 0.8 ms  
(typical)  
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Sector Erase (512 Kbit) in 0.6 s (typical)  
Bulk Erase (4 Mbit) in 4.5 s (typical)  
Deep Power-down mode 1 μA (typical)  
Hardware Write Protection: protected area  
size defined by three non-volatile bits (BP0,  
BP1 and BP2)  
SO8W (MW)  
208 mils width  
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Electronic signatures  
– JEDEC standard two-byte signature  
(2013h)  
– Unique ID code (UID) with 16 bytes read-  
only, available upon customer request  
– RES instruction, one-byte, signature (12h),  
for backward compatibility  
QFN8L (MS)  
MLP8 6 x 5 mm  
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Packages  
– RoHS compliant  
Automotive grade parts available  
VFQPN8 (MP)  
(MLP8 6 x 5 mm)  
May 2009  
Rev 18  
1/57  
www.Numonyx.com  
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