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M25P40-VMN6TG PDF预览

M25P40-VMN6TG

更新时间: 2024-11-24 04:43:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
40页 251K
描述
4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface

M25P40-VMN6TG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:0.150 INCH, ANTIMONY, TBBP-A FREE AND ROHS COMPLIANT, SOP-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.54
Is Samacsys:N最大时钟频率 (fCLK):50 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2.5/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:3.9 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25P40-VMN6TG 数据手册

 浏览型号M25P40-VMN6TG的Datasheet PDF文件第2页浏览型号M25P40-VMN6TG的Datasheet PDF文件第3页浏览型号M25P40-VMN6TG的Datasheet PDF文件第4页浏览型号M25P40-VMN6TG的Datasheet PDF文件第5页浏览型号M25P40-VMN6TG的Datasheet PDF文件第6页浏览型号M25P40-VMN6TG的Datasheet PDF文件第7页 
M25P40  
4 Mbit, Low Voltage, Serial Flash Memory  
With 40MHz SPI Bus Interface  
FEATURES SUMMARY  
4 Mbit of Flash Memory  
Figure 1. Packages  
Page Program (up to 256 Bytes) in 1.5ms  
(typical)  
Sector Erase (512 Kbit) in 1s (typical)  
Bulk Erase (4 Mbit) in 4.5s (typical)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
40MHz Clock Rate (maximum)  
8
Deep Power-down Mode 1µA (typical)  
Electronic Signature (12h)  
1
SO8 (MN)  
150 mil width  
VDFPN8 (MP)  
(MLP8)  
August 2004  
1/40  
 
 

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