Datasheet > M25P40-VMB3TPB

M25P40-VMB3TPB

更新时间： 2024-01-18 18:35:33

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
54页	717K
描述
4Mb, Low-Voltage, NOR Flash Memory with 75 MHz Serial Peripheral Interface

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数据手册

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M25P40-VMB3TPB 数据手册

M25P40 Serial Flash Embedded Memory

Features

M25P40 3V 4Mb Serial Flash Embedded

Memory

• Electronic signature

– JEDEC-standard 2-byte signature (2013h)

– Unique ID code (UID) with 16-byte read-only

space, available upon request

Features

• SPI bus-compatible serial interface

• 4Mb Flash memory

• 75 MHz clock frequency (maximum)

• 2.3V to 3.6V single supply voltage

• Page program (up to 256 bytes) in 0.8ms (TYP)

• Erase capability

– Sector erase: 512Kb in 0.6 s (TYP)

– Bulk erase: 4Mb in 4.5 s (TYP)

• Write protection

– RES command, one-byte signature (12h) for

backward compatibility

• More than 100,000 write cycles per sector

• Automotive-grade parts available

• Packages (RoHS-compliant)

– SO8N (MN) 150 mils

– SO8W (MW) 208 mils

– Hardware write protection: protected area size

defined by nonvolatile bits BP0, BP1, BP2

• Deep power-down: 1µA (TYP)

– VFDFPN8 (MP) MLP8 6mm x 5mm

– UFDFPN8 (MC) MLP8 4mm x 3mm

– UFDFPN8 (MB) MLP8 2mm x 3mm

PDF: 09005aef8456654f

m25p40.pdf - Rev. G 05/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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