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M25P20-VMN3GB PDF预览

M25P20-VMN3GB

更新时间: 2024-12-01 13:09:59
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
50页 964K
描述
Flash, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8

M25P20-VMN3GB 技术参数

生命周期:Transferred零件包装代码:SOIC
包装说明:0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8针数:8
Reach Compliance Code:unknown风险等级:5.3
JESD-30 代码:R-PDSO-G8内存集成电路类型:FLASH
端子数量:8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
编程电压:2.7 V认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

M25P20-VMN3GB 数据手册

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M25P20  
2 Mbit, low voltage, Serial Flash memory  
with 50MHz SPI bus interface  
Feature summary  
2 Mbit of Flash Memory  
Page Program (up to 256 Bytes) in 1.4ms  
(typical)  
Sector Erase (512 Kbit) in 1s (typical)  
Bulk Erase (2 Mbit) in 3s (typical)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
50MHz Clock Rate (maximum)  
Deep Power-down Mode 1μA (typical)  
Electronic Signatures  
SO8 (MN)  
150 mil width  
– JEDEC Standard two-Byte Signature  
(2012h)  
VFQFPN8 (MP)  
(MLP8)  
– RES Instruction, One-Byte, Signature  
(11h), for backward compatibility  
Packages  
– ECOPACK® (RoHS compliant)  
December 2007  
Rev 11  
1/50  
www.numonyx.com  
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