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M25P16-VMN3PB PDF预览

M25P16-VMN3PB

更新时间: 2024-09-18 15:18:27
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
62页 781K
描述
16Mb Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface

M25P16-VMN3PB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.44
最大时钟频率 (fCLK):75 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:2MX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:SPI
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:3.9 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25P16-VMN3PB 数据手册

 浏览型号M25P16-VMN3PB的Datasheet PDF文件第2页浏览型号M25P16-VMN3PB的Datasheet PDF文件第3页浏览型号M25P16-VMN3PB的Datasheet PDF文件第4页浏览型号M25P16-VMN3PB的Datasheet PDF文件第5页浏览型号M25P16-VMN3PB的Datasheet PDF文件第6页浏览型号M25P16-VMN3PB的Datasheet PDF文件第7页 
Micron M25P16 Serial Flash Embedded Memory  
Features  
Micron M25P16 Serial Flash Embedded  
Memory  
16Mb, 3V  
• Electronic signature  
– JEDEC standard 2-byte signature (2015h)  
Features  
• SPI bus compatible serial interface  
• 16Mb Flash memory  
• 75 MHz clock frequency (maximum)  
• 2.7V to 3.6V single supply voltage  
• Page program (up to 256 bytes) in 0.64ms (TYP)  
• Erase capability  
– Sector erase: 512Kb in 0.6 s (TYP)  
– Bulk erase: 16Mb in 13 s (TYP)  
• Write protection  
– Unique ID code (UID) and 16 bytes of read-only  
data, available upon customer request  
– RES command, one-byte signature (14h) for  
backward compatibility  
• More than 100,000 write cycles per sector  
• More than 20 years data retention  
• Automotive grade parts available  
• Packages (RoHS compliant)  
– SO8N (MN) 150 mils  
– Hardware write protection: protected area size  
defined by non-volatile bits BP0, BP1, BP2  
• Deep power down: 1µA (TYP)  
– SO8W (MW) 208 mils  
– SO16 (MF) 300 mils  
– VFDFPN8 (MP) MLP8 6mm x 5mm  
– VFDFPN8 (ME) MLP8 8mm x 6mm  
– UFDFPN8 (MC) MLP8 4mm x 3mm  
PDF: 09005aef8456656c  
m25p16.pdf - Rev. J 1/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2011 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  

M25P16-VMN3PB 替代型号

型号 品牌 替代类型 描述 数据表
M25P16-VMW6G MICRON

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16Mb Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface
M25P16-VMN6TP MICRON

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16Mb Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface
M25P16-VMN6P MICRON

类似代替

16Mb Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface

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16Mb Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface