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M25P128-VMF6PB PDF预览

M25P128-VMF6PB

更新时间: 2024-12-01 14:59:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
47页 905K
描述
128Mb, 3.0V, Serial NOR Flash Memory with 54 MHz SPI Bus Interface

M25P128-VMF6PB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP16,.4针数:16
Reach Compliance Code:compliantECCN代码:3A991
HTS代码:8542.32.00.51风险等级:8.53
最大时钟频率 (fCLK):50 MHz数据保留时间-最小值:20
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PDSO-G16
长度:10.3 mm内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:16
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.65 mm串行总线类型:SPI
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:7.5 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25P128-VMF6PB 数据手册

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M25P128  
128-Mbit, low-voltage, serial flash memory  
with 54-MHz SPI bus interface  
Features  
„ 128-Mbit flash memory  
„ 2.7 to 3.6 V single supply voltage  
„ SPI bus compatible serial interface  
„ 54 MHz clock rate (maximum) for 65 nm  
devices  
VDFPN8 (ME)  
8 x 6 mm (MLP8)  
„ V = 9 V for fast program/erase mode  
PP  
(optional)  
„ Page program (up to 256 Bytes):  
– in 0.5 ms (typical) for 65 nm devices  
– in 0.4 ms (typical with V = 9 V) for 65 nm  
PP  
devices  
„ Sector erase (2 Mbit)  
„ Bulk erase (128 Mbit)  
„ Electronic signature  
SO16 (MF)  
300 mils width  
– JEDEC standard two-byte signature  
(2018h)  
„ More than 10,000 erase/program cycles per  
sector  
„ More than 20-year data retention  
„ RoHS compliant packages  
March 2010  
Rev 6  
1/47  
www.numonyx.com  
1

M25P128-VMF6PB 替代型号

型号 品牌 替代类型 描述 数据表
N25Q128A13ESF40F MICRON

类似代替

N25Q128A
M25P128-VMF6TPB MICRON

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128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface

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