Datasheet > M25P05-AVMN6P

M25P05-AVMN6P

更新时间： 2024-11-14 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
132页	1301K
描述
This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

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M25P05-AVMN6P 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.57
其他特性：	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	最大时钟频率 (fCLK)：	25 MHz
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PDSO-G8
长度：	4.9 mm	内存密度：	524288 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	8
字数：	65536 words	字数代码：	64000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	64KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260	电源：	3/3.3 V
编程电压：	2.7 V	认证状态：	Not Qualified
座面最大高度：	1.75 mm	串行总线类型：	SPI
最大待机电流：	0.000005 A	子类别：	Flash Memories
最大压摆率：	0.015 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	类型：	NOR TYPE
宽度：	3.9 mm	写保护：	HARDWARE/SOFTWARE

M25P05-AVMN6P 数据手册

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

NAND Flash Memory

MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,

MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,

MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,

MT29F16G08AJADAWP

• First block (block address 00h) is valid when ship-

ped from factory with ECC. For minimum required

ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-

cles are less than 1000

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant¹

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks

16Gb: 16,384 blocks

• RESET (FFh) required as first command after pow-

er-on

• Alternate method of device initialization (Nand_In-

it) after power up (contact factory)

• Internal data move operations supported within the

plane from which data is read

• Quality and reliability

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range

• Asynchronous I/O performance

–

^tRC/^tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs ³

– Program page: 200µs (TYP: 1.8V, 3.3V)³

– Erase block: 700µs (TYP)

– V_CC: 2.7–3.6V

– V_CC: 1.7–1.95V

• Operating temperature:

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package

– Program page cache mode⁴

– Read page cache mode ⁴

– 48-pin TSOP type 1, CPL²

– 63-ball VFBGA

– One-time programmable (OTP) mode

– Two-plane commands ⁴

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for

detecting

1. The ONFI 1.0 specification is available at

www.onfi.org.

Notes:

2. CPL = Center parting line.

3. See Program and Erase Characteristics for

^tR_ECC and ^tPROG_ECC specifications.

4. These commands supported only with ECC

disabled.

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware

method of detecting operation completion

• WP# signal: Write protect entire device

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...132

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与M25P05-AVMN6P相关器件

型号	品牌	获取价格	描述	数据表
M25P05-AVMN6T	STMICROELECTRONICS	获取价格	512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf
M25P05-AVMN6TG	STMICROELECTRONICS	获取价格	512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf
M25P05-AVMN6TG	NUMONYX	获取价格	512 Kbit, serial Flash memory, 50 MHz SPI bus interface
M25P05-AVMN6TP	NUMONYX	获取价格	512 Kbit, serial Flash memory, 50 MHz SPI bus interface
M25P05-AVMN6TP	STMICROELECTRONICS	获取价格	512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf
M25P05-AVMN6TP	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
M25P05-AVMP3	STMICROELECTRONICS	获取价格	512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf
M25P05-AVMP3G	STMICROELECTRONICS	获取价格	512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf
M25P05-AVMP3P	STMICROELECTRONICS	获取价格	512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf
M25P05-AVMP3T	STMICROELECTRONICS	获取价格	512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf

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