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M24M01-RMN6TP/K PDF预览

M24M01-RMN6TP/K

更新时间: 2024-11-14 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
30页 288K
描述
EEPROM

M24M01-RMN6TP/K 技术参数

生命周期:Active包装说明:SOP-8
Reach Compliance Code:compliant风险等级:5.72
Is Samacsys:N备用内存宽度:1
最大时钟频率 (fCLK):1 MHzJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL座面最大高度:1.75 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

M24M01-RMN6TP/K 数据手册

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M24M01-R  
1 Mbit serial I²C bus EEPROM  
Features  
2
Compatible with I C extended addressing  
2
Two-wire I C serial interface  
supports 1 MHz protocol  
Single supply voltage:  
– 1.8 V to 5.5 V  
SO8 (MN)  
150 mils width  
Hardware write control  
Byte and Page Write (up to 256 bytes)  
Random and Sequential Read modes  
Self-timed programming cycle  
Automatic address incrementing  
Enhanced ESD/Latch-Up protection  
More than 1 million Write cycles  
More than 40-year data retention  
SO8 (MW)  
208 mils width  
Packages  
– ECOPACK® (RoHS compliant)  
November 2007  
Rev 3  
1/30  
www.st.com  
1

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