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M24C64-WBN6G/P PDF预览

M24C64-WBN6G/P

更新时间: 2024-10-26 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 396K
描述
8KX8 I2C/2-WIRE SERIAL EEPROM, PDIP8, ROHS COMPLIANT, PLASTIC, DIP-8

M24C64-WBN6G/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:compliant风险等级:5.27
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDIP-T8JESD-609代码:e3
长度:9.27 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:NOT APPLICABLE功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:5.33 mm串行总线类型:I2C
最大待机电流:0.000002 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):2.7 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6.37 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

M24C64-WBN6G/P 数据手册

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M24C64  
M24C32  
64Kbit and 32Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
Two-Wire I2C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
Write Control Input  
BYTE and PAGE WRITE (up to 32 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
8
1
Automatic Address Incrementing  
PDIP8 (BN)  
Enhanced ESD/Latch-Up Protection  
More than 1 Million Erase/Write Cycles  
More than 40-Year Data Retention  
8
1
SO8 (MN)  
150 mil width  
Table 1. Product List  
Reference  
Part Number  
M24C64  
M24C64  
M24C32  
M24C64-W  
M24C64-R  
M24C32  
TSSOP8 (DW)  
169 mil width  
M24C32-W  
M24C32-R  
UFDFPN8 (MB)  
2x3mm² (MLP)  
January 2005  
1/26  

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