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M24C32-WMB3TB PDF预览

M24C32-WMB3TB

更新时间: 2024-11-20 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 396K
描述
4KX8 I2C/2-WIRE SERIAL EEPROM, DSO8, 2 X 3 MM, MLP-8

M24C32-WMB3TB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:2 X 3 MM, MLP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.06最大时钟频率 (fCLK):0.4 MHz
JESD-30 代码:R-XDSO-N8JESD-609代码:e0
长度:3 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:4096 words字数代码:4000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:4KX8
封装主体材料:UNSPECIFIED封装代码:VSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:0.6 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:TIN LEAD
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:2 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

M24C32-WMB3TB 数据手册

 浏览型号M24C32-WMB3TB的Datasheet PDF文件第2页浏览型号M24C32-WMB3TB的Datasheet PDF文件第3页浏览型号M24C32-WMB3TB的Datasheet PDF文件第4页浏览型号M24C32-WMB3TB的Datasheet PDF文件第5页浏览型号M24C32-WMB3TB的Datasheet PDF文件第6页浏览型号M24C32-WMB3TB的Datasheet PDF文件第7页 
M24C64  
M24C32  
64Kbit and 32Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
Two-Wire I2C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
Write Control Input  
BYTE and PAGE WRITE (up to 32 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
8
1
Automatic Address Incrementing  
PDIP8 (BN)  
Enhanced ESD/Latch-Up Protection  
More than 1 Million Erase/Write Cycles  
More than 40-Year Data Retention  
8
1
SO8 (MN)  
150 mil width  
Table 1. Product List  
Reference  
Part Number  
M24C64  
M24C64  
M24C32  
M24C64-W  
M24C64-R  
M24C32  
TSSOP8 (DW)  
169 mil width  
M24C32-W  
M24C32-R  
UFDFPN8 (MB)  
2x3mm² (MLP)  
January 2005  
1/26  

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