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M24C32-WDW6TP/C PDF预览

M24C32-WDW6TP/C

更新时间: 2024-11-20 13:09:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 396K
描述
4KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.169 INCH, ROHS COMPLIANT, TSSOP-8

M24C32-WDW6TP/C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.169 INCH, ROHS COMPLIANT, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.05
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.4 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.2 mm
串行总线类型:I2C最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

M24C32-WDW6TP/C 数据手册

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M24C64  
M24C32  
64Kbit and 32Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
Two-Wire I2C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
Write Control Input  
BYTE and PAGE WRITE (up to 32 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
8
1
Automatic Address Incrementing  
PDIP8 (BN)  
Enhanced ESD/Latch-Up Protection  
More than 1 Million Erase/Write Cycles  
More than 40-Year Data Retention  
8
1
SO8 (MN)  
150 mil width  
Table 1. Product List  
Reference  
Part Number  
M24C64  
M24C64  
M24C32  
M24C64-W  
M24C64-R  
M24C32  
TSSOP8 (DW)  
169 mil width  
M24C32-W  
M24C32-R  
UFDFPN8 (MB)  
2x3mm² (MLP)  
January 2005  
1/26  

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