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M24C32-WBN6P/P PDF预览

M24C32-WBN6P/P

更新时间: 2024-11-19 12:57:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管双倍数据速率PC可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 396K
描述
4KX8 I2C/2-WIRE SERIAL EEPROM, PDIP8, ROHS COMPLIANT, PLASTIC, DIP-8

M24C32-WBN6P/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:compliant风险等级:5.28
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDIP-T8JESD-609代码:e3
长度:9.27 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:4096 words字数代码:4000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/5 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:5.33 mm串行总线类型:I2C
最大待机电流:0.000002 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):2.7 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6.37 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

M24C32-WBN6P/P 数据手册

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M24C64  
M24C32  
64Kbit and 32Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
Two-Wire I2C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
Write Control Input  
BYTE and PAGE WRITE (up to 32 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
8
1
Automatic Address Incrementing  
PDIP8 (BN)  
Enhanced ESD/Latch-Up Protection  
More than 1 Million Erase/Write Cycles  
More than 40-Year Data Retention  
8
1
SO8 (MN)  
150 mil width  
Table 1. Product List  
Reference  
Part Number  
M24C64  
M24C64  
M24C32  
M24C64-W  
M24C64-R  
M24C32  
TSSOP8 (DW)  
169 mil width  
M24C32-W  
M24C32-R  
UFDFPN8 (MB)  
2x3mm² (MLP)  
January 2005  
1/26  

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