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M24C32-DRDW3TP/K PDF预览

M24C32-DRDW3TP/K

更新时间: 2024-11-27 17:33:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
40页 604K
描述
汽车级32 Kbit串行I2C总线EEPROM

M24C32-DRDW3TP/K 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:14 weeks
风险等级:1.27最大时钟频率 (fCLK):1 MHz
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.4 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:4KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED筛选级别:AEC-Q100
座面最大高度:1.2 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):4 msBase Number Matches:1

M24C32-DRDW3TP/K 数据手册

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M24C32-A125  
Automotive 32-Kbit serial I²C bus EEPROM with 1 MHz clock  
Datasheet - production data  
Features  
2
Compatible with all I C bus modes  
– 1 MHz  
– 400 kHz  
– 100 kHz  
Memory array  
– 32 Kbit (4 Kbytes) of EEPROM  
TSSOP8 (DW)  
169 mil width  
– Page size: 32 bytes  
– Additional Write lockable page  
(Identification page)  
Extended temperature and voltage ranges  
– -40 °C to 125 °C; 1.8 V to 5.5 V  
Schmitt trigger inputs for noise filtering.  
Short Write cycle time  
– Byte Write within 4 ms  
– Page Write within 4 ms  
SO8 (MN)  
150 mil width  
Write cycle endurance  
– 4 million Write cycles at 25 °C  
– 1.2 million Write cycles at 85 °C  
– 600 k Write cycles at 125 °C  
WFDFPN8 (MF  
)
Data retention  
2 x 3 mm  
– 50 years at 125 °C  
– 100 years at 25 °C  
ESD Protection (Human Body Model)  
– 4000 V  
Packages  
– RoHS compliant and halogen-free  
®
(ECOPACK 2)  
January 2015  
DocID023377 Rev 6  
1/40  
This is information on a product in full production.  
www.st.com  
 

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