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M24C16-RMB3TP PDF预览

M24C16-RMB3TP

更新时间: 2024-11-25 23:05:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
29页 484K
描述
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM

M24C16-RMB3TP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SON, SOLCC8,.11,20Reach Compliance Code:compliant
风险等级:5.39数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010MMMR
JESD-30 代码:R-PDSO-N8内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
端子数量:8字数:2048 words
字数代码:2000最高工作温度:125 °C
最低工作温度:-40 °C组织:2KX8
封装主体材料:PLASTIC/EPOXY封装代码:SON
封装等效代码:SOLCC8,.11,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:2/5 V认证状态:Not Qualified
筛选级别:AEC-Q100串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.0008 mA表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL写保护:HARDWARE
Base Number Matches:1

M24C16-RMB3TP 数据手册

 浏览型号M24C16-RMB3TP的Datasheet PDF文件第2页浏览型号M24C16-RMB3TP的Datasheet PDF文件第3页浏览型号M24C16-RMB3TP的Datasheet PDF文件第4页浏览型号M24C16-RMB3TP的Datasheet PDF文件第5页浏览型号M24C16-RMB3TP的Datasheet PDF文件第6页浏览型号M24C16-RMB3TP的Datasheet PDF文件第7页 
M24C16, M24C08  
M24C04, M24C02, M24C01  
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
2
Two Wire I C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
8
Write Control Input  
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
1
PDIP8 (BN)  
8
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
UFDFPN8 (MB)  
2x3mm² (MLP)  
March 2004  
1/29  

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