是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP-8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 8.53 | 最大时钟频率 (fCLK): | 0.4 MHz |
数据保留时间-最小值: | 40 | 耐久性: | 1000000 Write/Erase Cycles |
I2C控制字节: | 1010DMMR | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 长度: | 9.27 mm |
内存密度: | 8192 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 1024 words |
字数代码: | 1000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3/5 V | 认证状态: | Not Qualified |
座面最大高度: | 5.33 mm | 串行总线类型: | I2C |
最大待机电流: | 0.000001 A | 子类别: | EEPROMs |
最大压摆率: | 0.002 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 2.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 7.62 mm | 最长写入周期时间 (tWC): | 5 ms |
写保护: | HARDWARE | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
M24C08-WBN6 | STMICROELECTRONICS |
类似代替 |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM | |
CAT24C08LI-G | ONSEMI |
功能相似 |
1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Ser | |
AT24C08B-PU | ATMEL |
功能相似 |
Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M24C08-WBN6P/S | STMICROELECTRONICS |
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M24C08-WBN6P/W | STMICROELECTRONICS |
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M24C08WBN6T | STMICROELECTRONICS |
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M24C08-WBN6T | STMICROELECTRONICS |
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M24C08-WBN6T/G | STMICROELECTRONICS |
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M24C08-WBN6T/S | STMICROELECTRONICS |
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M24C08-WBN6T/W | STMICROELECTRONICS |
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M24C08WBN6TG | STMICROELECTRONICS |
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M24C08-WBN6TG | STMICROELECTRONICS |
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M24C08-WBN6TG/G | STMICROELECTRONICS |
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