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M24C08-RMB6TG PDF预览

M24C08-RMB6TG

更新时间: 2024-11-30 23:05:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管PC可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
29页 484K
描述
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM

M24C08-RMB6TG 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOIC包装说明:2 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, MLP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.64Samacsys Confidence:
Samacsys Status:ReleasedSamacsys PartID:600755
Samacsys Pin Count:9Samacsys Part Category:Integrated Circuit
Samacsys Package Category:OtherSamacsys Footprint Name:DFN200X300X60-9N
Samacsys Released Date:2017-01-12 09:29:10Is Samacsys:N
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DMMR
JESD-30 代码:R-PDSO-N8JESD-609代码:e4
长度:3 mm内存密度:8192 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC8,.11,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:0.6 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.0008 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:NICKEL PALLADIUM GOLD
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:2 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

M24C08-RMB6TG 数据手册

 浏览型号M24C08-RMB6TG的Datasheet PDF文件第2页浏览型号M24C08-RMB6TG的Datasheet PDF文件第3页浏览型号M24C08-RMB6TG的Datasheet PDF文件第4页浏览型号M24C08-RMB6TG的Datasheet PDF文件第5页浏览型号M24C08-RMB6TG的Datasheet PDF文件第6页浏览型号M24C08-RMB6TG的Datasheet PDF文件第7页 
M24C16, M24C08  
M24C04, M24C02, M24C01  
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
2
Two Wire I C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
8
Write Control Input  
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
1
PDIP8 (BN)  
8
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
UFDFPN8 (MB)  
2x3mm² (MLP)  
March 2004  
1/29  

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