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M24C02-BN3TP PDF预览

M24C02-BN3TP

更新时间: 2024-11-06 22:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
29页 484K
描述
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM

M24C02-BN3TP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP,
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.38最大时钟频率 (fCLK):0.4 MHz
JESD-30 代码:R-PDIP-T8JESD-609代码:e3
长度:9.27 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:5.33 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

M24C02-BN3TP 数据手册

 浏览型号M24C02-BN3TP的Datasheet PDF文件第2页浏览型号M24C02-BN3TP的Datasheet PDF文件第3页浏览型号M24C02-BN3TP的Datasheet PDF文件第4页浏览型号M24C02-BN3TP的Datasheet PDF文件第5页浏览型号M24C02-BN3TP的Datasheet PDF文件第6页浏览型号M24C02-BN3TP的Datasheet PDF文件第7页 
M24C16, M24C08  
M24C04, M24C02, M24C01  
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
2
Two Wire I C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
8
Write Control Input  
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
1
PDIP8 (BN)  
8
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
UFDFPN8 (MB)  
2x3mm² (MLP)  
March 2004  
1/29  

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