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M24C01-RMB3TP PDF预览

M24C01-RMB3TP

更新时间: 2024-11-07 23:05:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
29页 484K
描述
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM

M24C01-RMB3TP 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.8
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-N8
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8端子数量:8
字数:128 words字数代码:128
最高工作温度:125 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:SON封装等效代码:SOLCC8,.11,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL电源:2/5 V
认证状态:Not Qualified串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.0008 mA表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL写保护:HARDWARE
Base Number Matches:1

M24C01-RMB3TP 数据手册

 浏览型号M24C01-RMB3TP的Datasheet PDF文件第2页浏览型号M24C01-RMB3TP的Datasheet PDF文件第3页浏览型号M24C01-RMB3TP的Datasheet PDF文件第4页浏览型号M24C01-RMB3TP的Datasheet PDF文件第5页浏览型号M24C01-RMB3TP的Datasheet PDF文件第6页浏览型号M24C01-RMB3TP的Datasheet PDF文件第7页 
M24C16, M24C08  
M24C04, M24C02, M24C01  
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
2
Two Wire I C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
8
Write Control Input  
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
1
PDIP8 (BN)  
8
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
UFDFPN8 (MB)  
2x3mm² (MLP)  
March 2004  
1/29  

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