是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | 3 X 3 MM, ROHS COMPLIANT, TSSOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.25 |
Is Samacsys: | N | 最大时钟频率 (fCLK): | 0.4 MHz |
数据保留时间-最小值: | 40 | 耐久性: | 1000000 Write/Erase Cycles |
I2C控制字节: | 1010DDDR | JESD-30 代码: | S-PDSO-G8 |
JESD-609代码: | e4 | 长度: | 3 mm |
内存密度: | 1024 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 128 words | 字数代码: | 128 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 组织: | 128X8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP8,.19 | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | 260 | 电源: | 2/5 V |
认证状态: | Not Qualified | 座面最大高度: | 1.1 mm |
串行总线类型: | I2C | 最大待机电流: | 0.000001 A |
子类别: | EEPROMs | 最大压摆率: | 0.0008 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 1.8 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 3 mm |
最长写入周期时间 (tWC): | 10 ms | 写保护: | HARDWARE |
Base Number Matches: | 1 |
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