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M24C01-BN3/G PDF预览

M24C01-BN3/G

更新时间: 2024-11-13 13:09:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
29页 484K
描述
128X8 I2C/2-WIRE SERIAL EEPROM, PDIP8, PLASTIC, DIP-8

M24C01-BN3/G 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP8,.3
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.64Is Samacsys:N
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDIP-T8JESD-609代码:e3
长度:9.27 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:5.33 mm
串行总线类型:I2C最大待机电流:0.000005 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

M24C01-BN3/G 数据手册

 浏览型号M24C01-BN3/G的Datasheet PDF文件第2页浏览型号M24C01-BN3/G的Datasheet PDF文件第3页浏览型号M24C01-BN3/G的Datasheet PDF文件第4页浏览型号M24C01-BN3/G的Datasheet PDF文件第5页浏览型号M24C01-BN3/G的Datasheet PDF文件第6页浏览型号M24C01-BN3/G的Datasheet PDF文件第7页 
M24C16, M24C08  
M24C04, M24C02, M24C01  
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
2
Two Wire I C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M24Cxx  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
8
Write Control Input  
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
1
PDIP8 (BN)  
8
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
UFDFPN8 (MB)  
2x3mm² (MLP)  
March 2004  
1/29  

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