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M24512-WDW6 PDF预览

M24512-WDW6

更新时间: 2024-09-28 22:46:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 381K
描述
512 Kbit Serial I睠 Bus EEPROM

M24512-WDW6 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.64
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:40耐久性:100000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.4 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:I2C最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.002 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

M24512-WDW6 数据手册

 浏览型号M24512-WDW6的Datasheet PDF文件第2页浏览型号M24512-WDW6的Datasheet PDF文件第3页浏览型号M24512-WDW6的Datasheet PDF文件第4页浏览型号M24512-WDW6的Datasheet PDF文件第5页浏览型号M24512-WDW6的Datasheet PDF文件第6页浏览型号M24512-WDW6的Datasheet PDF文件第7页 
M24512  
512 Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
Two-Wire I2C Serial Interface  
Supports 400 kHz Protocol  
Figure 1. Packages  
Supply Voltage Ranges:  
1.8V to 5.5V (M24512 R)  
2.5V to 5.5V (M24512 W)  
Write Control Input  
BYTE and PAGE WRITE (up to 128 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Protection  
More than 100,000 Erase/Write Cycles  
More than 40-Year Data Retention  
8
1
PDIP8 (BN)  
Table 1. M24512 devices  
Reference  
8
Part Number  
M24512 W  
M24512 R  
M24512  
1
SO8 (MW)  
208 mil width  
8
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
February 2005  
1/24  

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