SPECIFICATION FOR RoHS 6 COMPLIANT HCMOS/TTL SMT OSCILLATOR
MtronPTI P/N: M2002S949
Electrical Specifications
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Frequency
FO
30.000000
MHz
Inclusive of initial tolerance,
deviation over temperature,
shock, vibration and voltage
Frequency Stability
-50
+50
ppm
F/F
Operating Temperature
Storage Temperature
TA
TS
-40
-55
-3
-1
2.97
+85
+125
+3
+1
3.63
20
°C
°C
ppm
ppm
V
1st year
Thereafter (per year)
Aging
Operating Voltage
Operating Current
Output Type
VDD
IDD
3.3
mA
HCMOS/TTL Compatible
15/2
Output Load
pF/TTL
Symmetry (duty cycle)
Logic “1” Level
Logic “0” Level
Rise/Fall Time
Cycle-to-Cycle Jitter
TDC
VOH
VOL
TR/TF
C-CJ
45
90% VDD
55
%
V
V
ns
ps
@ ½ VDD
HCMOS load
HCMOS load
From 10% to 90% VDD
Per JESD65B
10% VDD
10
-15
+15
80% VDD
or N/C
Tri-state Enable Logic
V
Pad 1
Tri-state Disable Logic
Start-up Time
20% VDD
10
V
ms
Pad 1. Output to high-Z
TSU
Environmental Conditions
Mechanical Shock
Vibration
Thermal Cycle
Per MIL-STD-202, Method 213, Condition C (100 g’s, 6 ms duration, ½ sinewave)
Per MIL-STD-202, Method 201 & 204 (10 g’s from 10-2000 Hz)
Per MIL-STD-883, Method 1010, B (-55°C to 125°C, 15 min. dwell, 10 cycles)
Per MIL-STD-202, Method 112 (1 x 10-8 atm cc/s of Helium)
1500 volts; Per MIL-STD-833D, Method 3015, Class 1
1500 volts; Per MIL-STD-833D, Method 3015, Class 1
Per EIAJ-STD-002
Hermeticity
ESD-Human Body Model
ESD-Charged Device Model
Solderability
Max. Soldering Conditions
Package Type
See solder profile, Figure 1
5.0 x 7.0 x 1.9 mm, 4-pad Ceramic Leadless Chip Carrier (M2 type)
1 of 2
The information contained herein is proprietary to MtronPTI and is submitted in confidence.
This information may not be copied or divulged without written permission from MtronPTI.
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