M1MA174T1D

更新时间： 2024-09-22 22:46:47

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
8页	60K
描述
Silicon Switching Diode

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中文翻译

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M1MA174T1D 数据手册

M1MA174T1

Preferred Device

Silicon Switching Diode

MAXIMUM RATINGS

Rating

Symbol

Value

100

Unit

Continuous Reverse Voltage

Recurrent Peak Forward Current

http://onsemi.com

200

Peak Forward Surge Current

Pulse Width = 10 µs

500

FM(surge)

CATHODE

ANODE

Total Power Dissipation,

One Diode Loaded

200

1.6

= 25°C

Derate above 25°C

mW/°C

Mounted on a Ceramic Substrate

(10 x 8 x 0.6 mm)

Operating and Storage Junction

Temperature Range

T , T

–55 to

+150

°C

stg

SC–70/SOT–323

CASE 419

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

STYLE 2

Thermal Resistance,

Junction to Ambient

One Diode Loaded

Mounted on a Ceramic Substrate

(10 x 8 x 0.6 mm)

0.625

°C/mW

θJA

MARKING DIAGRAM

J6 M

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(I = 100 µAdc)

(BR)

100

–

Vdc

J6 = Device Code

= Date Code

Reverse Voltage Leakage Current

(V = 20 Vdc)

–

5.0

nAdc

µAdc

(V = 75 Vdc)

ORDERING INFORMATION

Diode Capacitance

(V = 0, f = 1.0 MHz)

–

4.0

1.0

4.0

Vdc

Device

M1MA174T1

Package

Shipping

3000/Tape & Reel

Forward Voltage

(I = 10 mAdc)

SC–70

Reverse Recovery Time

(I = I = 10 mAdc) (Figure 1)

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev. 1

M1MA174T1/D

12 3 4 5 6 7 8

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