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M13S64164A-6TIG PDF预览

M13S64164A-6TIG

更新时间: 2024-01-29 17:09:58
品牌 Logo 应用领域
晶豪 - ESMT 存储内存集成电路光电二极管动态存储器双倍数据速率
页数 文件大小 规格书
49页 1546K
描述
1M x 16 Bit x 4 Banks Double Data Rate SDRAM

M13S64164A-6TIG 技术参数

生命周期:Contact Manufacturer零件包装代码:TSOP2
包装说明:TSOP2,针数:66
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.1
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:0.7 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G66长度:22.22 mm
内存密度:67108864 bit内存集成电路类型:DDR DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:66
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
认证状态:Not Qualified座面最大高度:1.2 mm
自我刷新:YES最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

M13S64164A-6TIG 数据手册

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ESMT  
M13S64164A  
Operation Temperature Condition -40°C~85°C  
DDR SDRAM  
1M x 16 Bit x 4 Banks  
Double Data Rate SDRAM  
Features  
z
z
z
z
JEDEC Standard  
Internal pipelined double-data-rate architecture, two data access per clock cycle  
Bi-directional data strobe (DQS)  
On-chip DLL  
z
z
Differential clock inputs (CLK and CLK )  
DLL aligns DQ and DQS transition with CLK transition  
Quad bank operation  
z
z
z
z
z
z
z
z
z
z
z
z
z
CAS Latency : 2, 2.5, 3  
Burst Type : Sequential and Interleave  
Burst Length : 2, 4, 8  
All inputs except data & DM are sampled at the rising edge of the system clock(CLK)  
Data I/O transitions on both edges of data strobe (DQS)  
DQS is edge-aligned with data for reads; center-aligned with data for WRITE  
Data mask (DM) for write masking only  
For 2.5V parts, VDD = 2.3V ~ 2.7V, VDDQ = 2.3V ~ 2.7V  
Auto & Self refresh  
64ms refresh period, 4K cycle  
SSTL-2 I/O interface  
66pin TSOPII and 60 ball BGA package  
Ordering information :  
PRODUCT NO.  
M13S64164A -5TIG  
M13S64164A -6TIG  
M13S64164A -5BIG  
M13S64164A -6BIG  
MAX FREQ  
200MHz  
166MHz  
200MHz  
166MHz  
VDD  
PACKAGE  
COMMENTS  
2.5V  
66TSOPII  
Pb-free  
2.5V  
BGA  
Pb-free  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2009  
Revision : 1.0 1/49  

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