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M13S64164A-5TIG PDF预览

M13S64164A-5TIG

更新时间: 2024-02-23 02:31:15
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器双倍数据速率
页数 文件大小 规格书
49页 1546K
描述
1M x 16 Bit x 4 Banks Double Data Rate SDRAM

M13S64164A-5TIG 数据手册

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ESMT  
M13S64164A  
Operation Temperature Condition -40°C~85°C  
DDR SDRAM  
1M x 16 Bit x 4 Banks  
Double Data Rate SDRAM  
Features  
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JEDEC Standard  
Internal pipelined double-data-rate architecture, two data access per clock cycle  
Bi-directional data strobe (DQS)  
On-chip DLL  
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Differential clock inputs (CLK and CLK )  
DLL aligns DQ and DQS transition with CLK transition  
Quad bank operation  
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CAS Latency : 2, 2.5, 3  
Burst Type : Sequential and Interleave  
Burst Length : 2, 4, 8  
All inputs except data & DM are sampled at the rising edge of the system clock(CLK)  
Data I/O transitions on both edges of data strobe (DQS)  
DQS is edge-aligned with data for reads; center-aligned with data for WRITE  
Data mask (DM) for write masking only  
For 2.5V parts, VDD = 2.3V ~ 2.7V, VDDQ = 2.3V ~ 2.7V  
Auto & Self refresh  
64ms refresh period, 4K cycle  
SSTL-2 I/O interface  
66pin TSOPII and 60 ball BGA package  
Ordering information :  
PRODUCT NO.  
M13S64164A -5TIG  
M13S64164A -6TIG  
M13S64164A -5BIG  
M13S64164A -6BIG  
MAX FREQ  
200MHz  
166MHz  
200MHz  
166MHz  
VDD  
PACKAGE  
COMMENTS  
2.5V  
66TSOPII  
Pb-free  
2.5V  
BGA  
Pb-free  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2009  
Revision : 1.0 1/49  

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