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M13S32321A-6L PDF预览

M13S32321A-6L

更新时间: 2024-02-23 14:09:14
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器双倍数据速率
页数 文件大小 规格书
50页 819K
描述
256K x 32 Bit x 4 Banks Double Data Rate SDRAM

M13S32321A-6L 技术参数

生命周期:Contact Manufacturer零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.45
访问模式:FOUR BANK PAGE BURST最长访问时间:0.7 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PQFP-G100
长度:20 mm内存密度:33554432 bit
内存集成电路类型:DDR DRAM内存宽度:32
功能数量:1端口数量:1
端子数量:100字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX32封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE认证状态:Not Qualified
座面最大高度:1.6 mm自我刷新:YES
最大供电电压 (Vsup):2.625 V最小供电电压 (Vsup):2.375 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

M13S32321A-6L 数据手册

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ESMT  
DDR SDRAM  
M13S32321A  
256K x 32 Bit x 4 Banks  
Double Data Rate SDRAM  
Features  
z
z
z
z
JEDEC Standard  
Internal pipelined double-data-rate architecture, two data access per clock cycle  
Bi-directional data strobe (DQS)  
On-chip DLL  
z
z
Differential clock inputs (CLK and CLK )  
DLL aligns DQ and DQS transition with CLK transition  
Quad bank operation  
z
z
z
z
z
z
z
z
z
z
z
z
z
CAS Latency : 3; 4  
Burst Type : Sequential and Interleave  
Burst Length : 2, 4, 8  
All inputs except data & DM are sampled at the rising edge of the system clock(CLK)  
Data I/O transitions on both edges of data strobe (DQS)  
DQS is edge-aligned with data for reads; center-aligned with data for WRITE  
Data mask (DM) for write masking only  
VDD = 2.375V ~ 2.625V, VDDQ = 2.375V ~ 2.625V  
Auto & Self refresh  
32ms refresh period (4K cycle)  
SSTL-2 I/O interface  
100pin LQFP package  
Ordering Information :  
PRODUCT NO.  
MAX FREQ  
VDD  
PACKAGE  
COMMENTS  
M13S32321A -5L  
200MHz  
2.5V  
100 LQFP  
Pb-free  
M13S32321A -6L  
166MHz  
2.5V  
100 LQFP  
Pb-free  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jul. 2008  
Revision : 1.1 1/50  

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