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M13S2561616A_09 PDF预览

M13S2561616A_09

更新时间: 2024-02-05 16:15:04
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器双倍数据速率
页数 文件大小 规格书
49页 1315K
描述
4M x 16 Bit x 4 Banks Double Data Rate SDRAM

M13S2561616A_09 数据手册

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ESMT  
DDR SDRAM  
M13S2561616A  
4M x 16 Bit x 4 Banks  
Double Data Rate SDRAM  
Features  
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JEDEC Standard  
Internal pipelined double-data-rate architecture, two data access per clock cycle  
Bi-directional data strobe (DQS)  
On-chip DLL  
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z
Differential clock inputs (CLK and CLK )  
DLL aligns DQ and DQS transition with CLK transition  
Quad bank operation  
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z
z
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z
z
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CAS Latency : 2; 2.5; 3  
Burst Type : Sequential and Interleave  
Burst Length : 2, 4, 8  
All inputs except data & DM are sampled at the rising edge of the system clock(CLK)  
Data I/O transitions on both edges of data strobe (DQS)  
DQS is edge-aligned with data for reads; center-aligned with data for WRITE  
Data mask (DM) for write masking only  
VDD = 2.3V ~ 2.7V, VDDQ = 2.3V ~ 2.7V  
VDD = 2.4V ~ 2.8V, VDDQ = 2.4V ~ 2.8V (for speed -4)  
Auto & Self refresh  
7.8us refresh interval  
SSTL-2 I/O interface  
66pin TSOPII and 60 Ball BGA package  
Ordering Information:  
PRODUCT NO.  
MAX FREQ  
250MHz  
200MHz  
166MHz  
250MHz  
200MHz  
166MHz  
VDD  
PACKAGE  
COMMENTS  
M13S2561616A -4TG  
M13S2561616A -5TG  
M13S2561616A -6TG  
M13S2561616A -4BG  
M13S2561616A -5BG  
M13S2561616A -6BG  
2.6V  
TSOPII  
2.5V  
2.6V  
2.5V  
Pb-free  
BGA  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Sep. 2009  
Revision : 2.0 1/49  

与M13S2561616A_09相关器件

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4M x 16 Bit x 4 Banks Double Data Rate SDRAM
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M13S2561616A-4BG2A ESMT

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M13S2561616A-5BG ESMT

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M13S2561616A-5BG2A ESMT

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DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, B
M13S2561616A-5BG2K ESMT

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DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE