Datasheet > 存储 > DRAM> M13S128168A-6TG

M13S128168A-6TG

更新时间： 2024-02-15 02:35:05

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器双倍数据速率
页数	文件大小	规格书
49页	1492K
描述
2M x 16 Bit x 4 Banks Double Data Rate SDRAM

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M13S128168A-6TG 数据手册

ESMT

M13S128168A

Revision History

Revision 0.1 (15 Jan. 2002)

- Original

Revision 0.2 (19 Nov. 2002)

-changed ordering information & DC/AC characteristics

Revision 0.1

Revision 0.2

M13S128168A - 5T

M13S128168A - 6T

M13S128168A - 7.5AB

Revision 0.3 (8 Aug. 2003)

-Change IDD6 from 3mA to 5mA.

Revision 0.4 (27 Aug. 2003)

-Change ordering information & DC / AC characteristics.

Revision 1.0 (21 Oct. 2003)

-Modify tWTR from 2tck to 1tck.

Revision 1.1 (10 Nov. 2003)

-Correct some refresh interval that is not revised.

-Correct some CAS Lantency that is not revised.

Revision 1.2 (12 Jan. 2004)

-Correct IDD1; IDD4R and IDD4W test condition.

-Correct tRCD; tRP unit

-Add tCCD spec.

-Add tDAL spec.

Revision 1.3 (12 Mar. 2004)

-Add Cas Latency=2; 2.5

Revision 1.4 (23 Jun. 2005)

-Add Pb-free to ordering information

-Modify IDD0 and IDD1 spec

-Modify some AC timing unit from tCK to ns.

Revision 1.5 (29 May. 2006)

-Delete CL2 ; CL2.5

-Modify tREFI

-Delete Non-pb-free form ordering information

Revision 1.6 (3 Jan. 2007)

-Add CL2.5

Revision 1.7 (12 Apr. 2007)

-Add BGA package

Revision 1.8 (01 Jun. 2007)

-Delete CL 2.5

Elite Semiconductor Memory Technology Inc.

Publication Date : Jun. 2007

Revision : 1.8

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与M13S128168A-6TG相关器件

型号	品牌	获取价格	描述	数据表
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