是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSSOP, TSSOP66,.46 | Reach Compliance Code: | unknown |
风险等级: | 5.85 | 最长访问时间: | 10 ns |
最大时钟频率 (fCLK): | 166 MHz | I/O 类型: | COMMON |
交错的突发长度: | 2,4,8 | JESD-30 代码: | R-PDSO-G66 |
JESD-609代码: | e0 | 内存密度: | 134217728 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 16 |
端子数量: | 66 | 字数: | 8388608 words |
字数代码: | 8000000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 8MX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装等效代码: | TSSOP66,.46 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
电源: | 2.5 V | 认证状态: | Not Qualified |
刷新周期: | 4096 | 连续突发长度: | 2,4,8 |
最大待机电流: | 0.04 A | 子类别: | DRAMs |
最大压摆率: | 0.25 mA | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.635 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M13S128168A-6TG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM | |
M13S128168A-6TG2N | ESMT |
获取价格 |
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2- | |
M13S128168A-6TIG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM | |
M13S128168A-6TVAG2N | ESMT |
获取价格 |
Synchronous DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE | |
M13S128168A-7.5AB | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM | |
M13S128324A | ESMT |
获取价格 |
1M x 32 Bit x 4 Banks Double Data Rate SDRAM | |
M13S128324A_09 | ESMT |
获取价格 |
1M x 32 Bit x 4 Banks Double Data Rate SDRAM | |
M13S128324A_1 | ESMT |
获取价格 |
1M x 32 Bit x 4 Banks Double Data Rate SDRAM | |
M13S128324A-3.6BG | ESMT |
获取价格 |
1M x 32 Bit x 4 Banks Double Data Rate SDRAM | |
M13S128324A-3.6BG2M | ESMT |
获取价格 |
DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FRE |