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M13S128168A-6T PDF预览

M13S128168A-6T

更新时间: 2024-09-24 04:19:15
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器双倍数据速率
页数 文件大小 规格书
49页 1492K
描述
2M x 16 Bit x 4 Banks Double Data Rate SDRAM

M13S128168A-6T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSSOP, TSSOP66,.46Reach Compliance Code:unknown
风险等级:5.85最长访问时间:10 ns
最大时钟频率 (fCLK):166 MHzI/O 类型:COMMON
交错的突发长度:2,4,8JESD-30 代码:R-PDSO-G66
JESD-609代码:e0内存密度:134217728 bit
内存集成电路类型:DDR DRAM内存宽度:16
端子数量:66字数:8388608 words
字数代码:8000000最高工作温度:70 °C
最低工作温度:组织:8MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP66,.46
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:2.5 V认证状态:Not Qualified
刷新周期:4096连续突发长度:2,4,8
最大待机电流:0.04 A子类别:DRAMs
最大压摆率:0.25 mA标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.635 mm
端子位置:DUALBase Number Matches:1

M13S128168A-6T 数据手册

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ESMT  
M13S128168A  
Revision History  
Revision 0.1 (15 Jan. 2002)  
- Original  
Revision 0.2 (19 Nov. 2002)  
-changed ordering information & DC/AC characteristics  
Revision 0.1  
Revision 0.2  
M13S128168A - 5T  
M13S128168A - 6T  
M13S128168A - 6T  
M13S128168A - 7.5AB  
Revision 0.3 (8 Aug. 2003)  
-Change IDD6 from 3mA to 5mA.  
Revision 0.4 (27 Aug. 2003)  
-Change ordering information & DC / AC characteristics.  
Revision 1.0 (21 Oct. 2003)  
-Modify tWTR from 2tck to 1tck.  
Revision 1.1 (10 Nov. 2003)  
-Correct some refresh interval that is not revised.  
-Correct some CAS Lantency that is not revised.  
Revision 1.2 (12 Jan. 2004)  
-Correct IDD1; IDD4R and IDD4W test condition.  
-Correct tRCD; tRP unit  
-Add tCCD spec.  
-Add tDAL spec.  
Revision 1.3 (12 Mar. 2004)  
-Add Cas Latency=2; 2.5  
Revision 1.4 (23 Jun. 2005)  
-Add Pb-free to ordering information  
-Modify IDD0 and IDD1 spec  
-Modify some AC timing unit from tCK to ns.  
Revision 1.5 (29 May. 2006)  
-Delete CL2 ; CL2.5  
-Modify tREFI  
-Delete Non-pb-free form ordering information  
Revision 1.6 (3 Jan. 2007)  
-Add CL2.5  
Revision 1.7 (12 Apr. 2007)  
-Add BGA package  
Revision 1.8 (01 Jun. 2007)  
-Delete CL 2.5  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2007  
Revision : 1.8  
1/49  

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