M12S16161A-10T

更新时间： 2024-09-26 05:44:31

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器
页数	文件大小	规格书
28页	866K
描述
512K x 16Bit x 2Banks Synchronous DRAM

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中文翻译

获取价格

数据手册

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M12S16161A-10T 数据手册

ESMT

M12S16161A

SDRAM

512K x 16Bit x 2Banks

Synchronous DRAM

FEATURES

GENERAL DESCRIPTION

The M12S16161A is 16,777,216 bits synchronous high

data rate Dynamic RAM organized as 2 x 524,288 words by

16 bits, fabricated with high performance CMOS technology.

Synchronous design allows precise cycle control with the

use of system clock I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst length and programmable latencies allow the same

device to be useful for a variety of high bandwidth, high

performance memory system applications.

ꢀ

2.5V power supply

LVCMOS compatible with multiplexed address

Dual banks operation

MRS cycle with address key programs

CAS Latency (1, 2 & 3 )

Burst Length (1, 2, 4, 8 & full page)

Burst Type (Sequential & Interleave)

ꢀ

EMRS cycle with address key programs.

All inputs are sampled at the positive going edge of the

system clock

ꢀ

Burst Read Single-bit Write operation

Special Function Support.

ORDERING INFORMATION

PASR (Partial Array Self Refresh )

TCSR (Temperature compensated Self Refresh)

DS (Driver Strength)

MAX

Part NO.

Interface Package Comments

Freq.

Non-Pb-free

Pb-free

M12S16161A-10T

M12S16161A-15T

100MHz

66MHz

ꢀ

DQM for masking

Auto & self refresh

LVCMOS

TSOP(II)

M12S16161A-10TG 100MHz

32ms refresh period (2K cycle)

M12S16161A-15TG

66MHz

PIN CONFIGURATION (TOP VIEW)

VDD

VSS

DQ0

DQ1

VSSQ

DQ2

DQ3

VDDQ

DQ4

DQ5

VSSQ

DQ6

DQ7

VDDQ

LDQM

CAS

RAS

A10/AP

DQ15

DQ14

VSSQ

DQ13

DQ12

VDDQ

DQ11

DQ10

VSSQ

DQ9

DQ8

VDDQ

N.C/RFU

UDQM

CLK

CKE

N.C

VSS

VDD

50PIN TSOP(II)

(400mil x 825mil)

(0.8 mm PIN PITCH)

Elite Semiconductor Memory Technology Inc.

Publication Date : Jun. 2005

Revision : 1.0 1/28

12 3 4 5 6 7...28

中文翻译

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与M12S16161A-10T相关器件

型号	品牌	获取价格	描述	数据表
M12S16161A-10TG	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-15T	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-15TG	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-5TG2Q	ESMT	获取价格	Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE
M12S16161A-6BG	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-6BIG	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-6TG	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-6TIG	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-7BG	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-7BIG	ESMT	获取价格	512K x 16Bit x 2Banks Synchronous DRAM