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M12L64322A-7BG PDF预览

M12L64322A-7BG

更新时间: 2024-01-26 00:32:32
品牌 Logo 应用领域
晶豪 - ESMT 存储内存集成电路动态存储器
页数 文件大小 规格书
47页 783K
描述
512K x 32 Bit x 4 Banks Synchronous DRAM

M12L64322A-7BG 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TSOP2包装说明:TSSOP, TSSOP86,.46,20
针数:86Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.5访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):143 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G86
长度:22.22 mm内存密度:67108864 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:32
功能数量:1端口数量:1
端子数量:86字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP86,.46,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH电源:3.3 V
认证状态:Not Qualified刷新周期:2048
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.285 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

M12L64322A-7BG 数据手册

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ESMT  
M12L64322A  
Revision History  
Revision 0.1(Dec. 28 1998)  
-Original  
Revision 0.2(Jan. 29 1999)  
-Add page 45 "Packing Dimension"  
Revision 0.3(Apr. 20 2000)  
-Modify 6 tss from 2 to 1.5ns.(Page 7)  
Revision 0.4(May. 09 2001)  
- 64ms refresh period (4K cycle) --> 15.6μs refresh interval (P.1)  
- Add Packing Dimension Title 86-LEAD TSOP(II) DRAM(400mil).  
- Modify P.39  
Revision 1.0(Jun. 08 2001)  
- Modify ICC2NS, ICC6, tRDL, tOH spec  
Revision 1.1(Oct. 21 2002)  
- Add –5 spec, Delete -8 spec  
Revision 1.2(Nov. 11 2002)  
- Modify tCH, tCL spec  
Revision 1.3(Dec. 24 2002)  
- Delete -5 spec (AC/DC)  
Revision 1.4(Jan. 17 2003)  
- Modify tRDL to meet currently spec in the market  
Revision 1.5(Feb. 17 2003)  
- Typing error  
Revision 1.6(Oct. 29 2003)  
- Modify refresh period.  
Revision 1.7(May. 10 2004)  
- M12L64322A-6T tRDL=12ns  
- M12L64322A-7T tRDL=14ns  
Revision 1.8(May. 02 2005)  
- Add pb-free to ordering information  
- Recommend to add 4096 auto refresh before and after self refresh  
Revision 1.9(Nov. 04 2005)  
- Modify tCC / tRCD spec  
Revision 2.0(Dec. 08 2005)  
- Add –5T speed grade  
Revision 2.1(Mar. 08 2006)  
- Modify Inch Dimension Max. A2 from 0.011 to 0.041  
Revision 2.2(Nov. 27 2006)  
- Add BGA 90ball 8x13mm package  
Revision 2.3(Mar. 02 2007)  
- Delete BGA ball name of packing dimensions  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Mar. 2007  
Revision: 2.3  
1/47  

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