Datasheet > M12L64164A_07

M12L64164A_07

更新时间： 2024-01-03 23:20:01

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器
页数	文件大小	规格书
45页	814K
描述
1M x 16 Bit x 4 Banks Synchronous DRAM

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数据手册

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M12L64164A_07 数据手册

ESMT

SDRAM

M12L64164A

1M x 16 Bit x 4 Banks

Synchronous DRAM

FEATURES

54 Pin TSOP (Type II)

(400mil x 875mil )

JEDEC standard 3.3V power supply

LVTTL compatible with multiplexed address

Four banks operation

MRS cycle with address key programs

- CAS Latency (2 & 3)

PRODUCT NO. MAX FREQ. PACKAGE Comments

M12L64164A-5TG

M12L64164A-6TG

200MHz

166MHz

54 TSOP II

Pb-free

- Burst Length (1, 2, 4, 8 & full page)

- Burst Type (Sequential & Interleave)

All inputs are sampled at the positive going edge of the

system clock

DQM for masking

Auto & self refresh

M12L64164A-7TG

M12L64164A-5BG

M12L64164A-6BG

M12L64164A-7BG

143MHz

200MHz

166MHz

143MHz

54 TSOP II

54 VBGA

Pb-free

15.6 μ s refresh interval

ORDERING INFORMATION

GENERAL DESCRIPTION

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by

16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on

every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same

device to be useful for a variety of high bandwidth, high performance memory system applications.

PIN ASSIGNMENT

Top View

54 Ball FVBGA (8mmx8mm)

V^SS

V^DD

DQ0

V^DDQ

DQ1

DQ2

V^{S SQ}

DQ3

DQ4

V^DDQ

DQ5

DQ6

V^{S SQ}

DQ7

V^DD

DQ15

V^SSQ

DQ14

DQ13

V^DDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

V^DDQ

DQ8

V^SS

LDQM

UDQM

CLK

CKE

CAS

RAS

A¹¹

A¹³

A12

A10/AP

A⁰

VSS

VDD

Elite Semiconductor Memory Technology Inc.

Publication Date: Mar. 2007

Revision: 3.0 1/45

12 3 4 5 6 7...45

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与M12L64164A_07相关器件

型号	品牌	获取价格	描述	数据表
M12L64164A_0712	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A_09	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A_1	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A2M	ESMT	获取价格	1M x 16 Bit x 4 Banks
M12L64164A2Y	ESMT	获取价格	1M x 16 Bit x 4 Banks
M12L64164A-5BG	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2M	ESMT	获取价格	Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F
M12L64164A-5BG2Y	ESMT	获取价格	1M x 16 Bit x 4 Banks
M12L64164A-5BIG	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BIG2M	ESMT	获取价格	Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F